Vishay selects Aixtron’s G10-SiC multi-wafer batch technology Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G10-SiC chemical vapor deposition (CVD) epitaxy production platform has been chosen by discrete semiconductor and passive electronic component maker Vishay Intertechnology Inc of Malvern, PA, USA for its in-house silicon carbide (SiC) epitaxy needs for power device manufacturing. The system will be delivered to Vishay’s automotive-certified Newport fab in South Wales. With its flexible dual-wafer-size configuration of 9x150mm and 6x200mm, the G10-SiC supports the transition between wafer diameters...
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