Toshiba ships early test samples of bare die 1200V SiC MOSFET Toshiba Electronic Devices & Storage Corp has developed new 1200V silicon carbide (SiC) MOSFETs with an innovative structure that delivers both low on-resistance (RDS(ON)) and high reliability. The devices are particularly suited to automotive applications such as traction inverters. They are now available and shipping as early test samples in bare die format, allowing users to customize the bare die to meet their specific design needs and realize solutions for their applications...
https://www.semiconductor-toda....y.com/news_items/202

Richardson expands Navitas silicon carbide power device distribution Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA and Richardson Electronics Ltd of LaFox, IL, USA have announced an expanded distribution partnership for silicon carbide (SiC) power semiconductors for Europe, the Middle East and Africa (EMEA)...
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BluGlass enters into contract with NCSU for visible laser development as part of CLAWS Hub BluGlass Ltd of Silverwater, Australia — which develops and manufactures gallium nitride (GaN) blue laser diodes based on its proprietary low-temperature, low-hydrogen remote-plasma chemical vapor deposition (RPCVD) technology — has entered into a US$1.925m (AUS$2.9m) contract with North Carolina State University (NCSU) for visible laser development activity as part of the Commercial Leap Ahead for Wide Bandgap Semiconductors (CLAWS) Hub...
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CGD and IFPEN demo GaN-based 800VDC inverter that outperforms SiC Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — and IFP Energies nouvelles (IFPEN) — a French public research and training organization in the fields of energy, transport and the environment — have developed a demo that confirms the suitability of CGD’s ICeGaN650V GaN ICs in a multi-level, 800VDC inverter...
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Akash allocated US CHIPS Act funding for diamond cooling technology Akash Systems of Oakland, CA, USA has signed a non-binding preliminary memorandum of terms with the US Department of Commerce under the CHIPS and Science Act to receive over $68m in direct funding. This includes $18.2m in proposed direct funding and $50m in combined federal and California state tax credits. This proposed funding would provide Akash, a pioneer of diamond cooling semiconductor technologies, significant support for its operational ramp-up in AI, data centers, space and defense markets...
https://www.semiconductor-toda....y.com/news_items/202