CNIPA validates EPC’s GaN gate technology patent Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that the China National Intellectual Property Administration (CNIPA) has validated the claims of EPC’s patent ‘Compensated gate MISFET and method for fabricating the same’ (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices...
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