Toshiba ships early test samples of bare die 1200V SiC MOSFET Toshiba Electronic Devices & Storage Corp has developed new 1200V silicon carbide (SiC) MOSFETs with an innovative structure that delivers both low on-resistance (RDS(ON)) and high reliability. The devices are particularly suited to automotive applications such as traction inverters. They are now available and shipping as early test samples in bare die format, allowing users to customize the bare die to meet their specific design needs and realize solutions for their applications...
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