Aixtron leading project to increase energy efficiency in SiC layer deposition In cooperation with Erlangen-based Fraunhofer IISB (Institute for Integrated Systems and Device Technology) and Neuss-based bimanu Cloud Solutions GmbH in Germany, Herzogenrath-based deposition equipment maker Aixtron SE is leading a joint project ‘Increasing Energy Efficiency in SiC Epitaxy’...
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Go Maruyama becomes pSemi’s CEO as Tatsuo Bizen retires Murata company pSemi Corp of San Diego, CA, USA – a fabless provider of radio-frequency (RF), analog and mixed-signal solutions – has announced leadership changes and organizational restructuring to support its evolving business strategy and future growth...
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Mouser enters distribution agreement with Ampleon Mouser Electronics Inc (a Berkshire Hathaway company) has announced a global distribution agreement with Ampleon B.V. of Nijmegen, The Netherlands, which manufactures radio frequency power devices based on gallium nitride (GaN) and LDMOS technologies. Ampleon says that its portfolio offers flexibility in scaling design and production for any volume and addresses a wide range of applications, including 5G infrastructure, industrial, scientific & medical (ISM), navigation, broadcast communications, and safety radio...
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TSMC to cease GaN foundry production by end-July 2027 due to price pressure from Chinese rivals When gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA announced a strategic partnership for Taiwanese foundry Powerchip Semiconductor Manufacturing Corp (PSMC) to start production of 100V GaN products on 200mm silicon wafers in first-half 2026, this includes Navitas’ 650V devices transitioning from its existiing sole GaN-on-Si wafer foundry supplier Taiwan Semiconductor Manufacturing Company Ltd (TSMC) to Powerchip over the next 12–24 months...
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Infineon on track to ship customer samples of GaN on 300mm wafers in Q4/2025 Infineon Technologies AG of Munich, Germany says that its scalable gallium nitride (GaN) manufacturing on 300mm wafers is on track for first samples to be available to customers as of fourth-quarter 2025, positioning it to expand its customer base and reinforce its position as a leading integrated device manufacturer (IDM) in the GaN market as demand continues to grow. The GaN market for power applications will grow by 36% annually to about $2.5bn by 2030, forecasts Yole Group in its report ‘Power SiC and GaN Compound Semiconductor Market Monitor, Q1 2025’...
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